| 1 |
Study on mechanism of etching in low pressure radio-frequency plasmas
Dai ZL, Yue G, Wang YN
Current Applied Physics, 11(5), S121, 2011 |
| 2 |
Feature evolution during plasma etching. II. Polycrystalline silicon etching
Lane JM, Klemens FP, Bogart KHA, Malyshev MV, Lee JTC
Journal of Vacuum Science & Technology A, 18(1), 188, 2000 |
| 3 |
Dynamics of plasma-surface interactions and feature profile evolution during pulsed plasma etching
Ono K, Tuda M
Thin Solid Films, 374(2), 208, 2000 |
| 4 |
Hardmask charging during Cl-2 plasma etching of silicon
Vyvoda MA, Li M, Graves DB
Journal of Vacuum Science & Technology A, 17(6), 3293, 1999 |
| 5 |
Molecular dynamics simulations of Ar+ and Cl+ impacts onto silicon surfaces : Distributions of reflected energies and angles
Helmer BA, Graves DB
Journal of Vacuum Science & Technology A, 16(6), 3502, 1998 |
| 6 |
Surface diffusion model accounting for the temperature dependence of tungsten etching characteristics in a SF6 magnetoplasma
Bounasri F, Pelletier J, Moisan M, Chaker M
Journal of Vacuum Science & Technology B, 16(3), 1068, 1998 |
