화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Pseudomorphic growth and strain relaxation of alpha-Zn3P2 on GaAs(001) by molecular beam epitaxy
Bosco JP, Kimball GM, Lewis NS, Atwater HA
Journal of Crystal Growth, 363, 205, 2013
2 Substitutional carbon incorporation into molecular beam epitaxy-grown Si1-yCy layers
Zerlauth S, Penn C, Seyringer H, Brunthaler G, Bauer G, Schaffler F
Journal of Vacuum Science & Technology B, 16(3), 1679, 1998
3 Molecular beam epitaxial growth and photoluminescence investigation of Si1-yCy layers
Zerlauth S, Penn C, Seyringer H, Stangl J, Brunthaler G, Bauer G, Schaffler F
Thin Solid Films, 321(1-2), 33, 1998