검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Rate-limiting steps during nitrogen incorporation in furnace-grown silicon oxynitrides: effects on wafer-to-wafer uniformity Dang SS, Takoudis CG Thin Solid Films, 366(1-2), 225, 2000 |
| 2 |
Properties and reliability of ultrathin oxides grown on four inch diameter silicon wafers by microwave plasma afterglow oxidation Chen CR, Hu SF, Chen PC, Hwang HL, Hsia LC Journal of Vacuum Science & Technology B, 16(5), 2712, 1998 |
| 3 |
Growth and Film Characteristics of N2O and No Oxynitride Gate and Tunnel Dielectrics Hegde RI, Maiti B, Tobin PJ Journal of the Electrochemical Society, 144(3), 1081, 1997 |
| 4 |
Interpretation of Spectroscopic Ellipsometry Measurements of Ultrathin Dielectric Layers on Silicon - Impact of Accuracy of the Silicon Optical-Constants Tonova D, Depas M, Vanhellemont J Thin Solid Films, 288(1-2), 64, 1996 |