검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
"Temperature oscillation'' as a real-time monitoring of the growth of 3C-SiC on Si substrate Saito E, Konno A, Ito T, Yasui K, Nakazawa H, Endoh T, Narita Y, Suemitsu M Applied Surface Science, 254(19), 6235, 2008 |
| 2 |
Effects of substrate temperature on nanocrystalline diamond growth: an in-situ optical study using pyrometric interferometry Bruno P, Benedic F, Mohasseb F, Silva F, Hassouni K Thin Solid Films, 482(1-2), 50, 2005 |
| 3 |
Molecular beam epitaxy of GaN/AlxGa1-xN superlattices for 1.52-4.2 mu m intersubband transitions Ng HM, Gmachl C, Chu SNG, Cho AY Journal of Crystal Growth, 220(4), 432, 2000 |
| 4 |
Time resolved reflectivity measurements of silicon solid phase epitaxial regrowth Bauer M, Oehme M, Sauter M, Eifler G, Kasper E Thin Solid Films, 364(1-2), 228, 2000 |
| 5 |
Noise reduction in optical in situ measurements for molecular beam epitaxy by substrate wobble normalization Bertness KA, Hickernell RK, Hays SP, Christensen DH Journal of Vacuum Science & Technology B, 16(3), 1492, 1998 |