화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs
Ding LL, Gnani E, Gerardin S, Bagatin M, Driussi F, Selmi L, Le Royer C, Paccagnella A
Solid-State Electronics, 115, 146, 2016
2 Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs
Rossetto I, Rampazzo F, Gerardin S, Meneghini M, Bagatin M, Zanandrea A, Dua C, di Forte-Poisson MA, Aubry R, Oualli M, Delage SL, Paccagnella A, Meneghesso G, Zanoni E
Solid-State Electronics, 113, 15, 2015
3 Coadsorption optimization of DNA in binary self-assembled monolayer on gold electrode for electrochemical detection of oligonucleotide sequences
Ferrario A, Scaramuzza M, Pasqualotto E, De Toni A, Paccagnella A
Journal of Electroanalytical Chemistry, 689, 57, 2013
4 Radiation damage on dielectrics: Single event effects
Paccagnella A, Gerardin S, Cellere G
Journal of Vacuum Science & Technology B, 27(1), 406, 2009
5 Implanted and irradiated SiO2/Si structure electrical properties at the nanoscale
Porti M, Nafria N, Gerardin S, Aymerich X, Cester A, Paccagnella A, Ghidini G
Journal of Vacuum Science & Technology B, 27(1), 421, 2009
6 Peculiar characteristics of nanocrystal memory cells programming window
Gasperin A, Amat E, Martin J, Porti M, Nafria M, Paccagnella A
Journal of Vacuum Science & Technology B, 27(1), 512, 2009
7 Stress induced leakage current under pulsed voltage stress
Cester A, Paccagnella A, Ghidini G
Solid-State Electronics, 46(3), 399, 2002
8 Soft breakdown current noise in ultra-thin gate oxides
Cester A, Bandiera L, Ghidini G, Bloom I, Paccagnella A
Solid-State Electronics, 46(7), 1019, 2002
9 Time decay of stress induced leakage current in thin gate oxides by low-field electron injection
Cester A, Paccagnella A, Ghidini G
Solid-State Electronics, 45(8), 1345, 2001
10 Aspect ratio calculation in n-channel MOSFETs with a gate-enclosed layout
Giraldo A, Paccagnella A, Minzoni A
Solid-State Electronics, 44(6), 981, 2000