검색결과 : 40건
| No. | Article |
|---|---|
| 1 |
Minority carrier injection and current-voltage characteristics of Schottky diodes at high injection level Mnatsakanov TT, Levinshtein ME, Tandoev AG, Yurkov SN, Palmour JW Solid-State Electronics, 121, 41, 2016 |
| 2 |
Transient collector modulation of 4H-SiC BJTs during switch-on process Yuferev VS, Levinshtein ME, Ivanov PA, Zhang JQ, Palmour JW Solid-State Electronics, 123, 130, 2016 |
| 3 |
1/f noise in forward biased high voltage 4H-SiC Schottky diodes Shabunina EI, Levinshtein ME, Shmidt NM, Ivanov PA, Palmour JW Solid-State Electronics, 96, 44, 2014 |
| 4 |
Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse Levinshtein ME, Ivanov PA, Mnatsakanov TT, Palmour JW, Das MK, Hull BA Solid-State Electronics, 52(11), 1802, 2008 |
| 5 |
Steady state self-heating and dc current-voltage characteristics of high-voltage 4H-SiC p(+)-n-n(+) rectifier diodes Levinshtein ME, Mnatsakanov TT, Vanov PA, Palmour JW, Das MK, Hull BA Solid-State Electronics, 51(6), 955, 2007 |
| 6 |
High power 4H-SiC pin diodes (10 kV class) with record high carrier lifetime Ivanov PA, Levinshtein ME, Palmour JW, Das MK, Hull BA Solid-State Electronics, 50(7-8), 1368, 2006 |
| 7 |
Development of epitaxial SiC processes suitable for bipolar power devices Sumakeris JJ, Das MK, Ha S, Hurt E, Irvine K, Paisley MJ, O'Loughlin MJ, Palmour JW, Skowronski M, Hobgood HM, Carter CH Materials Science Forum, 483, 155, 2005 |
| 8 |
Steady-state and transient characteristics of high-voltage 4H-SiC junction diodes Ivanov PA, Levinshtein ME, Mnatsakanov TT, Palmour JW, Singh R, Irvin KG, Das M Materials Science Forum, 483, 973, 2005 |
| 9 |
On the homogeneity of the turn-on process in high-voltage 4H-SiC thyristors Levinshtein ME, Ivanov PA, Agarwal AK, Palmour JW Solid-State Electronics, 49(2), 233, 2005 |
| 10 |
High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes Levinshtein ME, Ivanov PA, Boltovets MS, Krivutsa VA, Palmour JW, Das MK, Hull BA Solid-State Electronics, 49(7), 1228, 2005 |