화학공학소재연구정보센터
검색결과 : 18건
No. Article
1 Easy plasma nano-texturing of PTFE surface: From pyramid to unusual spherules-on-pyramid features
Lo Porto C, Di Mundo R, Veronico V, Trizio I, Barucca G, Palumbo F
Applied Surface Science, 483, 60, 2019
2 Electron Transfer Reactions: KOtBu (but not NaOtBu) Photoreduces Benzophenone under Activation by Visible Light
Nocera G, Young A, Palumbo F, Emery KJ, Coulthard G, McGuire T, Tuttle T, Murphy JA
Journal of the American Chemical Society, 140(30), 9751, 2018
3 Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs
Palumbo F, Aguirre FL, Pazos SM, Krylov I, Winter R, Eizenberg M
Solid-State Electronics, 149, 71, 2018
4 Towards highly stable aqueous dispersions of multi-walled carbon nanotubes: the effect of oxygen plasma functionalization
Trulli MG, Sardella E, Palumbo F, Palazzo G, Giannossa LC, Mangone A, Comparelli R, Musso S, Favia P
Journal of Colloid and Interface Science, 491, 255, 2017
5 Improving regulation of microbiota transplants
Hoffmann D, Palumbo F, Ravel J, Roghmann MC, Rowthorn V, von Rosenvinge E
Science, 358(6369), 1390, 2017
6 Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks
Palumbo F, Pazos S, Aguirre F, Winter R, Krylov I, Eizenberg M
Solid-State Electronics, 132, 12, 2017
7 Filamentary superhydrophobic Teflon surfaces: Moderate apparent contact angle but superior air-retaining properties
Di Mundo R, Bottiglione F, Palumbo F, Notarnicola M, Carbone G
Journal of Colloid and Interface Science, 482, 175, 2016
8 Evolution of the gate current in 32 nm MOSFETs under irradiation
Palumbo F, Debray M, Vega N, Quinteros C, Kalstein A, Guarin F
Solid-State Electronics, 119, 19, 2016
9 Influence of the oxide-semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
Palumbo F, Shekhter P, Eizenberg M
Solid-State Electronics, 93, 56, 2014
10 Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect
Miranda E, Palumbo F
Solid-State Electronics, 61(1), 93, 2011