검색결과 : 18건
No. | Article |
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1 |
Easy plasma nano-texturing of PTFE surface: From pyramid to unusual spherules-on-pyramid features Lo Porto C, Di Mundo R, Veronico V, Trizio I, Barucca G, Palumbo F Applied Surface Science, 483, 60, 2019 |
2 |
Electron Transfer Reactions: KOtBu (but not NaOtBu) Photoreduces Benzophenone under Activation by Visible Light Nocera G, Young A, Palumbo F, Emery KJ, Coulthard G, McGuire T, Tuttle T, Murphy JA Journal of the American Chemical Society, 140(30), 9751, 2018 |
3 |
Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs Palumbo F, Aguirre FL, Pazos SM, Krylov I, Winter R, Eizenberg M Solid-State Electronics, 149, 71, 2018 |
4 |
Towards highly stable aqueous dispersions of multi-walled carbon nanotubes: the effect of oxygen plasma functionalization Trulli MG, Sardella E, Palumbo F, Palazzo G, Giannossa LC, Mangone A, Comparelli R, Musso S, Favia P Journal of Colloid and Interface Science, 491, 255, 2017 |
5 |
Improving regulation of microbiota transplants Hoffmann D, Palumbo F, Ravel J, Roghmann MC, Rowthorn V, von Rosenvinge E Science, 358(6369), 1390, 2017 |
6 |
Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks Palumbo F, Pazos S, Aguirre F, Winter R, Krylov I, Eizenberg M Solid-State Electronics, 132, 12, 2017 |
7 |
Filamentary superhydrophobic Teflon surfaces: Moderate apparent contact angle but superior air-retaining properties Di Mundo R, Bottiglione F, Palumbo F, Notarnicola M, Carbone G Journal of Colloid and Interface Science, 482, 175, 2016 |
8 |
Evolution of the gate current in 32 nm MOSFETs under irradiation Palumbo F, Debray M, Vega N, Quinteros C, Kalstein A, Guarin F Solid-State Electronics, 119, 19, 2016 |
9 |
Influence of the oxide-semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs Palumbo F, Shekhter P, Eizenberg M Solid-State Electronics, 93, 56, 2014 |
10 |
Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect Miranda E, Palumbo F Solid-State Electronics, 61(1), 93, 2011 |