검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Metal-oxide-semiconductor devices on p-type Ge with La2O3 and ZrO2/La2O3 as gate dielectric and the effect of postmetallization anneal Galata SF, Mavrou G, Tsipas P, Sotiropoulos A, Panayiotatos Y, Dimoulas A Journal of Vacuum Science & Technology B, 27(1), 246, 2009 |
| 2 |
Germanium FETs and capacitors with rare earth CeO2/HfO2 gates Dimoulas A, Panayiotatos Y, Sotiropoulos A, Tsipas P, Brunco DP, Nicholas G, Van Steenbergen J, Bellenger F, Houssa M, Caymax M, Meuris M Solid-State Electronics, 51(11-12), 1508, 2007 |
| 3 |
Interface engineering for Ge metal-oxide-semiconductor devices Dimoulas A, Brunco DP, Ferrari S, Seo JW, Panayiotatos Y, Sotiropoulos A, Conard T, Caymax M, Spiga S, Fanciulli M, Dieker C, Evangelou EK, Galata S, Houssa M, Heyns MM Thin Solid Films, 515(16), 6337, 2007 |
| 4 |
Electrical properties of atomic-beam deposited GeO1-xNx/HfO2 gate stacks on Ge Houssa M, Conard T, Bellenger F, Mavrou G, Panayiotatos Y, Sotiropoulos A, Dimoulas A, Meuris M, Caymax M, Heyns MM Journal of the Electrochemical Society, 153(12), G1112, 2006 |
| 5 |
Raman and photoluminescence study of magnetron sputtered amorphous carbon films Papadimitriou D, Roupakas G, Xue C, Topalidou A, Panayiotatos Y, Dimitriadis CA, Logothetidis S Thin Solid Films, 414(1), 18, 2002 |