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| No. | Article |
|---|---|
| 1 |
Selective infill metalorganic molecular beam epitaxy of InP : Si n(+)/n(-) layers for buried collector double heterostructure bipolar transistors Schelhase S, Bottcher J, Gibis R, Harde P, Paraskevopoulos A, Kunzel H Journal of Vacuum Science & Technology B, 16(1), 210, 1998 |