| 1 |
Validating gallium nitride growth kinetics using a precursor delivery showerhead as a novel chemical reactor
Parikh RP, Adomaitis RA, Aumer ME, Partlow DP, Thomson DB, Rubloff GW
Journal of Crystal Growth, 296(1), 15, 2006 |
| 2 |
In situ chemical sensing in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor-deposition process for real-time prediction of product crystal quality and advanced process control
Cho S, Rubloff GW, Aumer ME, Thomson DB, Partlow DP, Parikh R, Adomaitis RA
Journal of Vacuum Science & Technology B, 23(4), 1386, 2005 |
| 3 |
Real-time material quality prediction, fault detection, and contamination control in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing
Cho S, Rubloff GW, Aumer ME, Thomson DB, Partlow DP
Journal of Vacuum Science & Technology B, 23(5), 1849, 2005 |
| 4 |
In situ chemical sensing in AlGaN/GaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control
Cho S, Janiak DS, Rubloff GW, Aumer ME, Thomson DB, Partlow DP
Journal of Vacuum Science & Technology B, 23(5), 2007, 2005 |
