화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 The defect-centric perspective of device and circuit reliability-From gate oxide defects to circuits
Kaczer B, Franco J, Weckx P, Roussel PJ, Simicic M, Putcha V, Bury E, Cho M, Degraeve R, Linten D, Groeseneken G, Debacker P, Parvais B, Raghavan P, Catthoor F, Rzepa G, Waltl M, Goes W, Grasser T
Solid-State Electronics, 125, 52, 2016
2 Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
Chiarella T, Witters L, Mercha A, Kerner C, Rakowski M, Ortolland C, Ragnarsson LA, Parvais B, De Keersgieter A, Kubicek S, Redolfi A, Vrancken C, Brus S, Lauwers A, Absil P, Biesemans S, Hoffmann T
Solid-State Electronics, 54(9), 855, 2010
3 Impact of fin width on digital and analog performances of n-FinFETs
Subramanian V, Mercha A, Parvais B, Loo J, Gustin C, Dehan M, Collaert N, Jurczak M, Groeseneken G, Sansen W, Decoutere S
Solid-State Electronics, 51(4), 551, 2007
4 Scalable and multibias high frequency modeling of multi-fin FETs
Crupi G, Schreurs D, Parvais B, Caddemi A, Mercha A, Decoutere S
Solid-State Electronics, 50(11-12), 1780, 2006
5 Fully depleted SOICMOS technology for heterogeneous micropower, high-temperature or RF microsystems
Flandre D, Adriaensen S, Akheyar A, Crahay A, Demeus L, Delatte P, Dessard V, Iniguez B, Neve A, Katschmarskyj B, Loumaye P, Laconte J, Martinez I, Picun G, Rauly E, Renaux C, Spote D, Zitout M, Dehan M, Parvais B, Simon P, Vanhoenacker D, Raskin JP
Solid-State Electronics, 45(4), 541, 2001