화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Radiotracer investigation of gadolinium induced deep levels in hexagonal silicon carbide
Pasold G, Albrecht F, Hulsen C, Sielemann R, Zeitz WD, Witthuhn W
Materials Science Forum, 457-460, 783, 2004
2 Investigation of electronic states of Pd in 4H-SiC by means of Radiotracer-DLTS
Grossner U, Grillenberger J, Albrecht F, Pasold G, Sielemann R, Svensson BG, Witthuhn W
Materials Science Forum, 457-460, 791, 2004
3 Radiotracer spectroscopy on group II acceptors in GaN
Albrecht F, Pasold G, Grillenberger J, Reislohner U, Dietrich M, Witthuhn W
Materials Science Forum, 457-460, 1609, 2004
4 Polytype dependence of transition metal-related deep levels in 4H-, 6H-and 15R-SiC
Grillenberger J, Achtziger N, Pasold G, Witthuhn W
Materials Science Forum, 389-3, 573, 2002
5 A deep erbium-related bandgap state in 4H silicon carbide
Pasold G, Albrecht F, Grillenberger J, Grossner U, Hulsen C, Sielemann R, Witthuhn W
Materials Science Forum, 433-4, 487, 2002
6 Band gap states of Cr in the lower part of the SiC band gap
Pasold G, Achtziger N, Grillenberger J, Witthuhn W
Materials Science Forum, 353-356, 471, 2001
7 Tantalum and tungsten in silicon carbide: Identification and polytype dependence of deep levels
Grillenberger J, Achtziger N, Pasold G, Sielemann R, Witthuhn W
Materials Science Forum, 353-356, 475, 2001