| 1 |
Chemical vapor deposition of silicon in a lamp-heated reactor -Effects of heat absorption, emission, and conduction
Pejnefors J, Zhang SL, Radamson HH, Ostling M
Journal of the Electrochemical Society, 149(6), C355, 2002 |
| 2 |
Effects of growth kinetics and surface emissivity on chemical vapor deposition of silicon in a lamp-heated single-wafer reactor
Pejnefors J, Zhang SL, Radamsson HH, Ostling M
Electrochemical and Solid State Letters, 4(11), G98, 2001 |
| 3 |
A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
Grahn JV, Fosshaug H, Jargelius M, Jonsson P, Linder M, Malm BG, Mohadjeri B, Pejnefors J, Radamson HH, Sanden M, Wang YB, Landgren G, Ostling M
Solid-State Electronics, 44(3), 549, 2000 |
| 4 |
Characterization of in-Situ Phosphorus-Doped Polycrystalline Silicon Films Grown by Disilane-Based Low-Pressure Chemical-Vapor-Deposition
Grahn JV, Pejnefors J, Sanden M, Zhang SL, Ostling M
Journal of the Electrochemical Society, 144(11), 3952, 1997 |
