검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors Celik-Butler Z, Mahmud MI, Hao P, Hou F, Amey BL, Pendharkar S Solid-State Electronics, 111, 141, 2015 |
| 2 |
Characterization and modeling of electrical stress degradation in STI-based integrated power devices Reggiani S, Barone G, Gnani E, Gnudi A, Baccarani G, Poli S, Wise R, Chuang MY, Tian WD, Pendharkar S, Denison M Solid-State Electronics, 102, 25, 2014 |
| 3 |
Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight Poli S, Reggiani S, Baccarani G, Gnani E, Gnudi A, Denison M, Pendharkar S, Wise R Solid-State Electronics, 65-66, 57, 2011 |
| 4 |
Theoretical analysis of the vertical LOCOS DMOS transistor with process-induced stress enhancement Reggiani S, Denison M, Gnani E, Gnudi A, Baccarani G, Pendharkar S, Wise R Solid-State Electronics, 54(9), 950, 2010 |
| 5 |
A new strictly alternating comblike amphiphilic polymer based on PEG. 1. Synthesis and associative behavior of a low molecular weight sample Heitz C, Pendharkar S, Prud'homme RK, Kohn J Macromolecules, 32(20), 6652, 1999 |
| 6 |
Process development of sub-0.5 mu m nonvolatile magnetoresistive random access memory arrays Nordquist K, Pendharkar S, Durlam M, Resnick D, Tehrani S, Mancini D, Zhu T, Shi J Journal of Vacuum Science & Technology B, 15(6), 2274, 1997 |
| 7 |
Extendibility of X-Ray-Lithography to Less-Than-or-Equal-to-130 nm Ground Rules in Complex Integrated-Circuit Patterns Hector S, Chu W, Thompson M, Pol V, Dauksher B, Cummings K, Resnick D, Pendharkar S, Maldonado J, Mccord M, Krasnoperova A, Liebmann L, Silverman J, Guo J, Khan M, Bollepalli S, Capodieci L, Cerrina F Journal of Vacuum Science & Technology B, 14(6), 4288, 1996 |