검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Two independent ways of preparing hypercharged hydrolyzable polyaminorotaxane Peres B, Richardeau N, Jarroux N, Guegan P, Auvray L Biomacromolecules, 9(7), 2007, 2008 |
| 2 |
Mo/Al/Mo/Au Ohmic contact scheme for AlxGa1-xN/GaN high electron mobility transistors annealed at 500 degrees C Basu A, Mohammed FM, Guo S, Peres B, Adesida I Journal of Vacuum Science & Technology B, 24(2), L16, 2006 |
| 3 |
Fabrication and characterization of high breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire substrates Choi YC, Pophristic M, Peres B, Spencer MG, Eastman LF Journal of Vacuum Science & Technology B, 24(6), 2601, 2006 |
| 4 |
Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors Mazaev KM, Lobanova AV, Yakovlev EV, Talalaev RA, Galyukov AO, Makarov YN, Gotthold D, Albert B, Kadinski L, Peres B Journal of Crystal Growth, 261(2-3), 190, 2004 |
| 5 |
Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors Lobanova A, Mazaev K, Yakovlev E, Talalaev R, Galyukov A, Makarov Y, Gotthold D, Albert B, Kadinski L, Peres B Journal of Crystal Growth, 266(1-3), 354, 2004 |
| 6 |
Small signal measurement of SC2O3AlGaN/GaN moshemts Luo B, Mehandru R, Kang BS, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch R, Gillespie JK, Jenkins T, Sewell J, Via D, Crespo A Solid-State Electronics, 48(2), 355, 2004 |
| 7 |
Quaternary InAlGaN-based multi-quantum wells for ultraviolet light emitting diodes grown by metalorganic chemical vapor deposition Guo SP, Pophristic M, Peres B, Ferguson IT Journal of Crystal Growth, 252(4), 486, 2003 |
| 8 |
Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch RC, Moser N, Gillespie JK, Jessen GH, Jenkins TJ, Yannuzi MJ, Via GD, Crespo A Solid-State Electronics, 47(10), 1781, 2003 |