검색결과 : 59건
| No. | Article |
|---|---|
| 1 |
Preparation and characterization of indium chalcogenide thin films: A material for phase change memory Pandian M, Matheswaran P, Gokul B, Sathyamoorthy R, Asokan K Applied Surface Science, 449, 55, 2018 |
| 2 |
Dynamics of the current filament formation and its steady-state characteristics in chalcogenide based PCM Bogoslovskiy N, Tsendin K Solid-State Electronics, 129, 10, 2017 |
| 3 |
Feasibility study of current pulse induced 2-bit/4-state multilevel programming in phase-change memory Liu Y, Fan X, Chen HP, Wang YQ, Liu B, Song ZT, Feng SL Solid-State Electronics, 134, 51, 2017 |
| 4 |
The investigations of characteristics of Sb2Te as a base phase-change material Liu GY, Wu LC, Zhu M, Song ZT, Rao F, Song SN, Cheng Y Solid-State Electronics, 135, 31, 2017 |
| 5 |
Scalable CGeSbTe-based phase change memory devices employing U-Shaped cells Park JH, Kim JH, Ko DH, Wu Z, Ahn DH, Park SO, Hwang KH Thin Solid Films, 634, 141, 2017 |
| 6 |
Phase-Change Memory Materials by Design: A Strain Engineering Approach Zhou XL, Kalikka J, Ji XL, Wu LC, Song ZT, Simpson RE Advanced Materials, 28(15), 3007, 2016 |
| 7 |
Ultra-multiple and reproducible resistance levels based on intrinsic crystallization properties of Ge1Sb4Te7 film Yin Y, Iwashita S, Hosaka S, Wang T, Li JZ, Liu Y, Yu Q Applied Surface Science, 369, 348, 2016 |
| 8 |
Direct evidence of reactive ion etching induced damages in Ge2Sb2Te5 based on different halogen plasmas Li JT, Xia YY, Liu B, Feng GM, Song ZT, Gao D, Xu Z, Wang WW, Chan YP, Feng SL Applied Surface Science, 378, 163, 2016 |
| 9 |
Modeling of transient thermal dissipation of nanoscale phase-change memory cells in the pulse domain Zhou W, Li Z, He Q, Miao XS International Journal of Heat and Mass Transfer, 94, 301, 2016 |
| 10 |
The improvement of nitrogen doped Ge2Sb2Te5 on the phase change memory resistance distributions Xu Z, Liu B, Chen YF, Zhang ZH, Gao D, Wang H, Song ZT, Wang CZ, Ren JD, Zhu NF, Xiang YH, Zhan YP, Feng SL Solid-State Electronics, 116, 119, 2016 |