화학공학소재연구정보센터
검색결과 : 51건
No. Article
1 Effect of Slurry Application/Injection Schemes on Slurry Availability during Chemical Mechanical Planarization (CMP)
Liao XY, Sampurno Y, Zhuang Y, Philipossian A
Electrochemical and Solid State Letters, 15(4), H118, 2012
2 Tribological, Thermal and Kinetic Attributes of 300 vs. 450 mm Chemical Mechanical Planarization Processes
Jiao YB, Liao XY, Wu CH, Theng S, Zhuang Y, Sampurno Y, Goldstein M, Philipossian A
Journal of the Electrochemical Society, 159(3), H255, 2012
3 Effect of concentric slanted pad groove patterns on slurry flow during chemical mechanical planarization
Rosales-Yeomans D, Lee H, Suzuki T, Philipossian A
Thin Solid Films, 520(6), 2224, 2012
4 Effect of Pad Surface Micro-Texture on Coefficient of Friction and Removal Rate during Copper CMP Process
Liao X, Zhuang Y, Borucki LJ, Theng S, Wei X, Ashizawa T, Philipossian A
Electrochemical and Solid State Letters, 14(5), H201, 2011
5 An Approach for Correlating Friction Force and Removal Rate to Pad Topography during Tungsten Chemical Mechanical Planarization
Sampurno Y, Rice A, Zhuang Y, Philipossian A
Electrochemical and Solid State Letters, 14(8), H318, 2011
6 Effect of Retaining Ring Slot Design on Slurry Film Thickness during CMP
Wei XM, Sampurno YA, Zhuang Y, Dittler R, Meled A, Cheng J, Wargo C, Stankowski R, Philipossian A
Electrochemical and Solid State Letters, 13(4), H119, 2010
7 Tribological, Thermal, and Wear Characteristics of Poly(phenylene sulfide) and Polyetheretherketone Retaining Rings in Interlayer Dielectric CMP
Wei XM, Zhuang Y, Sampurno Y, Sudargho F, Wargo C, Borucki L, Philipossian A
Electrochemical and Solid State Letters, 13(11), H391, 2010
8 Diamond Disc Diagnostic Method Based on "Dry" Coefficient of Friction Measurements
Meled A, Sampurno Y, Sudargho F, Zhuang Y, Philipossian A
Electrochemical and Solid State Letters, 13(12), H457, 2010
9 Analyses of Diamond Disk Substrate Wear and Diamond Microwear in Copper Chemical Mechanical Planarization Process
Meled A, Zhuang Y, Wei X, Cheng J, Sampurno YA, Borucki L, Moinpour M, Hooper D, Philipossian A
Journal of the Electrochemical Society, 157(3), H250, 2010
10 Pad flattening ratio, coefficient of friction and removal rate analysis during silicon dioxide chemical mechanical planarization
Lee H, Zhuang Y, Sugiyama M, Seike Y, Takaoka M, Miyachi K, Nishiguchi T, Kojima H, Philipossian A
Thin Solid Films, 518(8), 1994, 2010