화학공학소재연구정보센터
검색결과 : 23건
No. Article
1 Thermodynamic Scaling of Interfering Hemoglobin Strain Field Waves
Phillips JC
Journal of Physical Chemistry B, 122(40), 9324, 2018
2 Structural basis of co-translational quality control by ArfA and RF2 bound to ribosome
Zeng FX, Chen YB, Remis J, Shekhar M, Phillips JC, Tajkhorshid E, Jin H
Nature, 541(7638), -, 2017
3 High temperature cuprate-like superconductivity
Phillips JC
Chemical Physics Letters, 473(4-6), 274, 2009
4 Is there a lowest upper bound for superconductive transition temperatures?
Phillips JC
Chemical Physics Letters, 451(1-3), 98, 2008
5 Chemical self-organization length scales in non- and nano-crystalline thin films
Lucovsky G, Phillips JC
Solid-State Electronics, 51(10), 1308, 2007
6 The influence of particle size on the flow of initially fluidised powders
Roche O, Gilbertson MA, Phillips JC, Sparks RSJ
Powder Technology, 166(3), 167, 2006
7 Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxides in metal oxide semiconductor (MOS) structures
Lucovsky G, Phillips JC
Thin Solid Films, 486(1-2), 200, 2005
8 Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO2 interface
Lucovsky G, Phillips JC
Journal of Vacuum Science & Technology B, 22(4), 2087, 2004
9 Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics
Lucovsky G, Maria JP, Phillips JC
Journal of Vacuum Science & Technology B, 22(4), 2097, 2004
10 Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces
Lucovsky G, Phillips JC
Applied Surface Science, 166(1-4), 497, 2000