1 |
Thermodynamic Scaling of Interfering Hemoglobin Strain Field Waves Phillips JC Journal of Physical Chemistry B, 122(40), 9324, 2018 |
2 |
Structural basis of co-translational quality control by ArfA and RF2 bound to ribosome Zeng FX, Chen YB, Remis J, Shekhar M, Phillips JC, Tajkhorshid E, Jin H Nature, 541(7638), -, 2017 |
3 |
High temperature cuprate-like superconductivity Phillips JC Chemical Physics Letters, 473(4-6), 274, 2009 |
4 |
Is there a lowest upper bound for superconductive transition temperatures? Phillips JC Chemical Physics Letters, 451(1-3), 98, 2008 |
5 |
Chemical self-organization length scales in non- and nano-crystalline thin films Lucovsky G, Phillips JC Solid-State Electronics, 51(10), 1308, 2007 |
6 |
The influence of particle size on the flow of initially fluidised powders Roche O, Gilbertson MA, Phillips JC, Sparks RSJ Powder Technology, 166(3), 167, 2006 |
7 |
Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxides in metal oxide semiconductor (MOS) structures Lucovsky G, Phillips JC Thin Solid Films, 486(1-2), 200, 2005 |
8 |
Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO2 interface Lucovsky G, Phillips JC Journal of Vacuum Science & Technology B, 22(4), 2087, 2004 |
9 |
Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics Lucovsky G, Maria JP, Phillips JC Journal of Vacuum Science & Technology B, 22(4), 2097, 2004 |
10 |
Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces Lucovsky G, Phillips JC Applied Surface Science, 166(1-4), 497, 2000 |