검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Physical modeling of millimetre wave signal reflection from forward biased PIN diodes Jackson RP, Mitchell SJN, Fusco V Solid-State Electronics, 54(2), 149, 2010 |
| 2 |
Study of forward voltage drift in diffused SiCPIN diodes doped by Al or B Maximenko S, Soloviev S, Grekov A, Bolotnikov A, Gao Y, Sudarshan TS Materials Science Forum, 483, 989, 2005 |
| 3 |
Properties and suitability of 4H-SIC epitaxial layers grown at different CVD systems for hijh voltage applications Thomas B, Bartsch W, Stein R, Schorner R, Stephani D Materials Science Forum, 457-460, 181, 2004 |
| 4 |
Stacking fault formation sites and growth in thick-epi SiC PiN diodes Stahlbush RE, Twigg ME, Irvine KG, Sumakeris JJ, Chow TP, Losee PA, Zhu L, Tang Y, Wang W Materials Science Forum, 457-460, 533, 2004 |
| 5 |
Partial dislocations and stacking faults in 4H-SiC PiN diodes Twigg ME, Stahlbush RE, Fatemi M, Arthur SD, Fedison JB, Tucker JB, Wang S Materials Science Forum, 457-460, 537, 2004 |
| 6 |
Design and implementation of the optimized edge termination in 1.8 W4H-SiC PiN diodes Sankin I, Draper WA, Merrett JN, Casady JRB, Casady JB Materials Science Forum, 457-460, 1101, 2004 |
| 7 |
Electrical characterisation of the gamma and UV irradiated epitaxial 1.2 kV 4H-SiC PiN diodes Wolborski M, Bakowski M, Klamra W Materials Science Forum, 457-460, 1487, 2004 |
| 8 |
Opportunities and technical strategies for silicon carbide device development Cooper JA Materials Science Forum, 389-3, 15, 2002 |
| 9 |
Propagation of current-induced stacking faults and forward voltage degradation in 4H-SiC PiN diodes Stahlbush RE, Fedison JB, Arthur SD, Rowland LB, Kretchmer JW, Wang S Materials Science Forum, 389-3, 427, 2002 |
| 10 |
High-voltage pulse instabilities in SiC Schottky diodes with implanted resistive edge terminations Morisette DT, Cooper JA Materials Science Forum, 389-3, 1157, 2002 |