검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Oxygen Vacancy Creation, Drift, and Aggregation in TiO2-Based Resistive Switches at Low Temperature and Voltage Kwon J, Sharma AA, Bain JA, Picard YN, Skowronski M Advanced Functional Materials, 25(19), 2876, 2015 |
| 2 |
Glide of threading edge dislocations after basal plane dislocation conversion during 4H-SiC epitaxial growth Abadier M, Song HZ, Sudarshan TS, Picard YN, Skowronski M Journal of Crystal Growth, 418, 7, 2015 |
| 3 |
Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates Liu F, Huang L, Kamaladasa R, Picard YN, Preble EA, Paskova T, Evans KR, Davis RF, Porter LM Journal of Crystal Growth, 387, 16, 2014 |
| 4 |
Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates Huang L, Liu F, Zhu JX, Kamaladasa R, Preble EA, Paskova T, Evans K, Porter L, Picard YN, Davis RF Journal of Crystal Growth, 347(1), 88, 2012 |
| 5 |
Relating Precursor Pyrolysis Conditions and Aqueous Electrolyte Capacitive Energy Storage Properties for Activated Carbons Derived from Anhydrous Glucose-d Chun SE, Picard YN, Whitacre JF Journal of the Electrochemical Society, 158(2), A83, 2011 |
| 6 |
Growth and photoluminescence properties of vertically aligned SnO2 nanowires Mazeina L, Picard YN, Caldwell JD, Glaser ER, Prokes SM Journal of Crystal Growth, 311(11), 3158, 2009 |