검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Determination of silicon oxide precipitate stoichiometry using global and local techniques Nicolai J, Burle N, Pichaud B Journal of Crystal Growth, 363, 93, 2013 |
| 2 |
Characterizing and modeling the evolution of silicon oxide precipitates during thermal cycles Nicolai J, Burle N, Serafino C, Pichaud B Journal of Crystal Growth, 372, 138, 2013 |
| 3 |
Effect of Si and He implantation in the formation of ultra shallow junctions in Si Xu M, Regula G, Daineche R, Oliviero E, Hakim B, Ntsoenzok E, Pichaud B Thin Solid Films, 518(9), 2354, 2010 |
| 4 |
Structural characterization of nc-Si films grown by low-energy PECVD on different substrates Le Donne A, Binetti S, Isella G, Pichaud B, Texier M, Acciarri M, Pizzini S Applied Surface Science, 254(9), 2804, 2008 |
| 5 |
Dynamical study of dislocations and 4H -> 3C transformation induced by stress in (11-20) 4H-SiC Idrissi H, Lancin M, Douin J, Regula G, Pichaud B Materials Science Forum, 483, 299, 2005 |
| 6 |
High temperature Si(001) surface defect evolution during extended annealing: experimental results and modelling Barge D, Pichaud B, Joly JP Applied Surface Science, 226(4), 341, 2004 |
| 7 |
Study of dislocation mobility in 4H SiC by X-Ray transmission topography, chemical etching and transmission electron microscopy Idrissi H, Lancin M, Regula G, Pichaud B Materials Science Forum, 457-460, 355, 2004 |
| 8 |
Microstructure and Residual-Stresses in (111)Au/Ni Multilayers Labat S, Pichaud B, Thomas O, Alfonso C, Charai A, Barrallier L, Gilles B, Marty A Thin Solid Films, 275(1-2), 29, 1996 |
| 9 |
X-Ray Study of Relaxation Process of Strained GaAs-Layers Grown on (100) Ge Substrates Burle N, Pichaud B, Guelton N, Saintjacques RG Thin Solid Films, 260(1), 65, 1995 |