검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Behaviour of TFMS and CPW line on SOI substrate versus high temperature for RF applications Moussa MS, Pavageau C, Lederer D, Picheta L, Danneville F, Fel N, Russat J, Raskin JP, Vanhoenacker-Janvier D Solid-State Electronics, 50(11-12), 1822, 2006 |
| 2 |
0.25 mu m fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters Vanmackelberg M, Raynaud C, Faynot O, Pelloie JL, Tabone C, Grouillet A, Martin F, Dambrine G, Picheta L, Mackowiak E, Llinares P, Sevenhans J, Compagne E, Fletcher G, Flandre D, Dessard V, Vanhoenacker D, Raskin JP Solid-State Electronics, 46(3), 379, 2002 |