화학공학소재연구정보센터
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No. Article
1 Interfacial properties of all-epitaxial Fe-Ge/Ge heterostructures on Ge(111)
Maafa I, Jaafar R, Hajjar-Garreau S, Berling D, Mehdaoui A, Pirri C, Deny E, Florentin A, Uhlaq-Bouillet C, Garreau G
Thin Solid Films, 545, 257, 2013
2 Size effect on Ge nanowires growth kinetics by the vapor-liquid-solid mechanism
Renard C, Boukhicha R, Gardes C, Fossard F, Yam V, Vincent L, Bouchier D, Hajjar S, Bubendorff JL, Garreau G, Pirri C
Thin Solid Films, 520(8), 3314, 2012
3 Analysis of the substrate effect on the nucleation and growth mode of electrodeposited cobalt on copper and graphite electrodes
Harti H, Bubendorff JL, Florentin A, Pirri C, Ebothe J
Journal of Crystal Growth, 319(1), 79, 2011
4 c(4x8) periodicity in ultrathin iron silicides on Si(111)
Garreau G, Hajjar S, Pelletier S, Imhoff M, Pirri C
Applied Surface Science, 212, 711, 2003
5 Substrate manipulation by insertion of a thin and strained 2D layer: effect on Ge/Si growth
Simon L, Louis P, Pirri C, Aubel D, Bischoff JL, Kubler L, Bolmont D
Journal of Crystal Growth, 256(1-2), 1, 2003
6 Epitaxy stabilised CaF2-type ternary Co1-xFexSi2) silicides on Si(111): DAFS and HRTEM measurements
Ersen O, Pierron-Bohnes V, Ulhaq-Bouillet C, Pirri C, Tuilier MH, Berling D, Bertoncini P, Gailhanou M, Thiaudiere D
Applied Surface Science, 188(1-2), 146, 2002
7 Formation of Metastable Epitaxial Cosix (X-Less-Than-2) Layers by Reactive Codeposition on CoSi2(111)
Hong S, Wetzel P, Gewinner G, Pirri C
Journal of Vacuum Science & Technology A, 14(6), 3236, 1996