검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents Raeissi B, Piscator J, Chen YY, Engstrom O Journal of the Electrochemical Society, 158(3), G63, 2011 |
| 2 |
Gd silicate: A high-k dielectric compatible with high temperature annealing Gottlob HDB, Stefani A, Schmidt M, Lemme MC, Kurz H, Mitrovic IZ, Werner M, Davey WM, Hall S, Chalker PR, Cherkaoui K, Hurley PK, Piscator J, Engstrom O, Newcomb SB Journal of Vacuum Science & Technology B, 27(1), 249, 2009 |
| 3 |
Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon Hurley PK, Cherkaoui K, O'Connor E, Lemme MC, Gottlob HDB, Schmidt M, Hall S, Lu Y, Buiu O, Raeissi B, Piscator J, Engstrom O, Newcomb SB Journal of the Electrochemical Society, 155(2), G13, 2008 |
| 4 |
High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy Raeissi B, Piscator J, Engstrom O, Hall S, Buiu O, Lemme MC, Gottlob HDB, Hurley PK, Cherkaoui K, Osten HJ Solid-State Electronics, 52(9), 1274, 2008 |