검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
28 nm FDSOI analog and RF Figures of Merit at N-2 cryogenic temperatures Esfeh BK, Planes N, Haond M, Raskin JP, Flandre D, Kilchytska V Solid-State Electronics, 159, 77, 2019 |
| 2 |
An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models Pereira ASN, de Steel G, Planes N, Haond M, Giacomini R, Flandre D, Kilchytska V Solid-State Electronics, 128, 67, 2017 |
| 3 |
Comparison of self-heating and its effect on analogue performance in 28 nm bulk and FDSOI Makovejev S, Planes N, Haond M, Flandre D, Raskin JP, Kilchytska V Solid-State Electronics, 115, 219, 2016 |
| 4 |
Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements Esfeh BK, Kilchytska V, Barral V, Planes N, Haond M, Flandre D, Raskin JP Solid-State Electronics, 117, 130, 2016 |
| 5 |
Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs Ioannidis EG, Haendler S, Josse E, Planes N, Ghibaudo G Solid-State Electronics, 118, 4, 2016 |
| 6 |
Wide frequency band assessment of 28 nm FDSOI technology platform for analogue and RF applications Makovejev S, Esfeh BK, Barral V, Planes N, Haond M, Flandre D, Raskin JP, Kilchytska V Solid-State Electronics, 108, 47, 2015 |
| 7 |
Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology Fenouillet-Beranger C, Perreau P, Benoist T, Richier C, Haendler S, Pradelle J, Bustos J, Brun P, Tosti L, Weber O, Andrieu F, Orlando B, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gregoire M, Ducote J, Gouraud P, Margain A, Borowiak C, Bianchini R, Planes N, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Boeuf F Solid-State Electronics, 88, 15, 2013 |
| 8 |
65 nm LP/GP mix low cost platform for multi-media wireless and consumer applications Tavel B, Duriez B, Gwoziecki R, Basso MT, Julien C, Ortolland C, Laplanche Y, Fox R, Sabouret E, Detcheverry C, Boeuf F, Morin P, Barge D, Bidaud M, Bienacel J, Garnier P, Cooper K, Chapon JD, Trouiller Y, Belledent J, Broekaart M, Gouraud P, Denais M, Huard V, Rochereau K, Difrenza R, Planes N, Marin M, Boret S, Gloria D, Vanbergue S, Abramowitz P, Vishnubhotla L, Reber D, Stolk P, Woo M, Arnaud F Solid-State Electronics, 50(4), 573, 2006 |
| 9 |
SOL thinning effects on 3C-SiC on SOI Planes N, Moller H, Camassel J, Stoemenos Y, Falkovski L, Eickhoff M, Krotz G Materials Science Forum, 338-3, 301, 2000 |
| 10 |
Characterization of 3C-SiC/SOI deposited with HMDS Planes N, Aboughe-Nze P, Ravetz M, Contreras S, Vicente P, Chassagne T, Fraisse B, Camassel J, Monteil Y, Rushworth S Materials Science Forum, 338-3, 599, 2000 |