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Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted Surface Vishwanath V, Demenev E, Giubertoni D, Vanzetti L, Koh AL, Steinhauser G, Pepponi G, Bersani M, Meirer F, Foad MA Applied Surface Science, 355, 792, 2015 |
2 |
질소 이온이 주입된 STS 316L 스테인리스 강에서의 상변화와 집합조직이 내식성에 미치는 영향 전신희, 공영민 Korean Journal of Materials Research, 25(6), 293, 2015 |
3 |
Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory Lai CS, Wang JC, Chang LC, Liao YK, Chou PC, Chang WC, Ai CF, Tsai WF Solid-State Electronics, 77, 31, 2012 |
4 |
Wear and corrosion behaviors of Ti6Al4V alloy biomedical materials by silver plasma immersion ion implantation process Liu HX, Xu Q, Zhang XW, Wang CQ, Tang BY Thin Solid Films, 521, 89, 2012 |
5 |
Effects of O-2 and H2O plasma immersion ion implantation on surface chemical composition and surface energy of poly vinyl chloride Zhang W, Chu PK, Ji JH, Zhang YH, Jiang ZM Applied Surface Science, 252(22), 7884, 2006 |
6 |
Formation of silicon on plasma synthesized SiOxNy and reaction mechanism Zhu M, Shi XJ, Chen P, Liu WL, Wong M, Lin CL, Chu PK Applied Surface Science, 243(1-4), 89, 2005 |
7 |
Aplication of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection Chiu SY, Wang YL, Chang SC, Feng MS Thin Solid Films, 478(1-2), 293, 2005 |
8 |
Palladium seeding on the tantalum-insulated silicon oxide film by plasma immersion ion implantation for the growth of electroless Copper Lin JH, Tsai YY, Chiu SY, Lee TL, Tsai CM, Chen PH, Lin CC, Feng MS, Kou CS, Shih HC Thin Solid Films, 377-378, 592, 2000 |