| 1 |
Study on efficiency improvement of multi-crystalline silicon solar cell by removing by-product and plasma induced damage generated during reactive ion etching
Kim MJ, Min KH, Park S, Song HE, Lee JI, Jeong KT, Park JS, Kang MG
Current Applied Physics, 20(4), 519, 2020 |
| 2 |
Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
Kim K, Oh IK, Kim H, Lee Z
Applied Surface Science, 425, 781, 2017 |
| 3 |
Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric
Min KS, Park C, Kang CY, Park CS, Park BJ, Kim YW, Lee BH, Lee JC, Bersuker G, Kirsch P, Jammy R, Yeom GY
Solid-State Electronics, 82, 82, 2013 |
| 4 |
A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology
Weng WT, Lee YJ, Lin HC, Huang TY
Solid-State Electronics, 54(4), 368, 2010 |
| 5 |
Annealing behavior of electrical properties in plasma-exposed Ti/p-Si interfaces
Yamaguchi T, Kato H, Fujimura N, Ito T
Thin Solid Films, 396(1-2), 119, 2001 |
| 6 |
Influence of reactive ion etching damage on the Schottky barrier height of Ti/p-Si interface
Fujimura N, Yamaguchi T, Kato H, Ito T
Applied Surface Science, 159, 186, 2000 |
| 7 |
Temperature-Dependent Dry-Etching Characteristics of III-V Semiconductors in HBr-Based and HI-Based Discharges
Pearton SJ, Ren F, Abernathy CR
Plasma Chemistry and Plasma Processing, 14(2), 131, 1994 |
