| 1 |
Dependence of the relative sensitivity factor of nitrogen on various oxynitride dielectric matrixes
Zhu L, Teo HW, Huang YH, Ong K, Hua YN
Thin Solid Films, 542, 134, 2013 |
| 2 |
Microstructure and antibacterial properties of microwave plasma nitrided layers on biomedical stainless steels
Lin LH, Chen SC, Wu CZ, Hung JM, Ou KL
Applied Surface Science, 257(17), 7375, 2011 |
| 3 |
The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices
Zhu XG, Ahyi AC, Li MY, Chen ZJ, Rozen J, Feldman LC, Williams JR
Solid-State Electronics, 57(1), 76, 2011 |
| 4 |
An X-ray photoelectron spectroscopy study of ultra-thin oxynitride films
Ladas S, Sygellou L, Kennou S, Wolf M, Roeder G, Nutsch A, Rambach M, Lerch W
Thin Solid Films, 520(2), 871, 2011 |
| 5 |
Effects of N-2 and NH3 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics
Park KS, Baek KH, Kim DP, Woo JC, Do LM, No KS
Applied Surface Science, 257(4), 1347, 2010 |
| 6 |
Defect states in HfO2 on deposited on Ge(111) and Ge(100) substrates
Lucovsky G, Seo H, Long JP, Chung KB, Vasic R, Ulrich M
Applied Surface Science, 255(13-14), 6443, 2009 |
| 7 |
Impact of post-nitridation annealing on ultra-thin gate oxide performance
He YD, Zhang GG
Applied Surface Science, 256(1), 318, 2009 |
| 8 |
Suppression of Ge-O and Ge-N bonding at Ge-HfO(2) and Ge-TiO(2) interfaces by deposition onto plasma-nitrided passivated Ge substrates
Lee S, Long JP, Lucovsky G, Luning J
Thin Solid Films, 517(1), 155, 2008 |
| 9 |
Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substrates
Maikap S, Lee JH, Mahapatra R, Pal S, No YS, Choi WK, Ray SK, Kim DY
Solid-State Electronics, 49(4), 524, 2005 |
| 10 |
Plasma assisted nitridation of Ti-6Al-4V
Fouquet V, Pichon L, Drouet M, Straboni A
Applied Surface Science, 221(1-4), 248, 2004 |
