화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Ionization and mass spectrometry of decaborane for shallow implantation of boron into silicon
Sosnowski M, Albano MA, Babaram V, Gurudath R, Poate JM, Jacobson D
Journal of the Electrochemical Society, 147(11), 4329, 2000
2 The Mechanisms of Iron Gettering in Silicon by Boron Ion-Implantation
Benton JL, Stolk PA, Eaglesham DJ, Jacobson DC, Cheng JY, Poate JM, Myers SM, Haynes TE
Journal of the Electrochemical Society, 143(4), 1406, 1996
3 Surface Roughness-Induced Artifacts in Secondary-Ion Mass-Spectrometry Depth Profiling and a Simple Technique to Smooth the Surface
Herner SB, Gila BP, Jones KS, Gossmann HJ, Poate JM, Luftman HS
Journal of Vacuum Science & Technology B, 14(6), 3593, 1996