검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA Solid-State Electronics, 80, 19, 2013 |
| 2 |
Effect of Drain Bias on Degradation of AlGaN/GaN High Electron Mobility Transistors under X-Band Operation Douglas EA, Pearton SJ, Poling B, Via GD, Liu L, Ren F Electrochemical and Solid State Letters, 14(11), H464, 2011 |