검색결과 : 29건
| No. | Article |
|---|---|
| 1 |
Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells Weiner EC, Jakomin R, Micha DN, Xie H, Su PY, Pinto LD, Pires MP, Ponce FA, Souza PL Solar Energy Materials and Solar Cells, 178, 240, 2018 |
| 2 |
Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow Wang S, Li XH, Fischer AM, Detchprohm T, Dupuis RD, Ponce FA Journal of Crystal Growth, 475, 334, 2017 |
| 3 |
A review of the synthesis of reduced defect density InxGa1-xN for all indium compositions Clinton EA, Vadiee E, Fabien CAM, Moseley MW, Gunning BP, Doolittle WA, Fischer AM, Wei YO, Xie HG, Ponce FA Solid-State Electronics, 136, 3, 2017 |
| 4 |
Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE Torelly G, Jakomin R, Pinto LD, Pires MP, Ruiz J, Caldas PG, Prioli R, Xie H, Ponce FA, Souza PL Journal of Crystal Growth, 434, 47, 2016 |
| 5 |
Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition Liu YS, Haq AFMS, Kao TT, Mehta K, Shen SC, Detchprohm T, Yoder PD, Dupuis RD, Xie HG, Ponce FA Journal of Crystal Growth, 443, 81, 2016 |
| 6 |
Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition Li XH, Wei YO, Wang S, Xie HG, Mao TT, Satter MM, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Fischer AM, Ponce FA Journal of Crystal Growth, 414, 76, 2015 |
| 7 |
Low-temperature growth of InGaN films over the entire composition range by MBE Fabien CAM, Gunning BP, Doolittle WA, Fischer AM, Wei YO, Xie HG, Ponce FA Journal of Crystal Growth, 425, 115, 2015 |
| 8 |
Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating Choi S, Kim HJ, Lochner Z, Kim J, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JYY, Ponce FA, Ryou JH Journal of Crystal Growth, 388, 137, 2014 |
| 9 |
Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions Kim J, Lochner Z, Ji MH, Choi S, Kim HJ, Kim JS, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JYY, Ponce FA, Ryou JH Journal of Crystal Growth, 388, 143, 2014 |
| 10 |
The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays Cherns D, Webster RF, Novikov SV, Foxon CT, Fischer AM, Ponce FA Journal of Crystal Growth, 384, 55, 2013 |