화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Gate leakage properties in (Al(2)O(3)/HfO(2)/Al(2)O(3)) dielectric of MOS devices
Nasrallah SAB, Bouazra A, Poncet A, Said M
Thin Solid Films, 517(1), 456, 2008
2 Electronic properties of Ge nanocrystals for non volatile memory applications
Kanoun M, Busseret C, Poncet A, Souifi A, Baron T, Gautier E
Solid-State Electronics, 50(7-8), 1310, 2006
3 Ground and first excited states observed in silicon nanocrystals by photocurrent technique
De la Torre J, Souifi A, Poncet A, Bremond G, Guillot G, Garrido B, Morante JR
Solid-State Electronics, 49(7), 1112, 2005