검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
C-doped semi-insulating GaNHFETs on sapphire substrates with a high breakdown voltage and low specific on-resistance Choi YC, Shi J, Pophristic M, Spencer MG, Eastman LF Journal of Vacuum Science & Technology B, 25(6), 1836, 2007 |
| 2 |
Fabrication and characterization of high breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire substrates Choi YC, Pophristic M, Peres B, Spencer MG, Eastman LF Journal of Vacuum Science & Technology B, 24(6), 2601, 2006 |
| 3 |
Quaternary InAlGaN-based multi-quantum wells for ultraviolet light emitting diodes grown by metalorganic chemical vapor deposition Guo SP, Pophristic M, Peres B, Ferguson IT Journal of Crystal Growth, 252(4), 486, 2003 |
| 4 |
Time-resolved photoluminescence measurements of InGaN light-emitting diodes Pophristic M, Long FH, Tran C, Ferguson IT Materials Science Forum, 338-3, 1623, 2000 |