검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Ferroelectric properties of SOS and SOI pseudo-MOSFETs with HfO2 interlayers Popov VP, Antonov VA, Ilnitsky MA, Tyschenko IE, Vdovin VI, Miakonkikh AV, Rudenko KV Solid-State Electronics, 159, 63, 2019 |
| 2 |
Comparison of electrical properties of silicon-on-insulator structures fabricated with use of hydrogen slicing and BESOI Antonova IV, Nikolaev DV, Naumova OV, Popov VP Electrochemical and Solid State Letters, 7(3), F21, 2004 |
| 3 |
Characterization of silicon-on-insulator structures by high-resolution X-ray diffraction Antonova IV, Popov VP, Bak-Misiuk J, Domagala JZ Journal of the Electrochemical Society, 149(8), G490, 2002 |
| 4 |
Properties of silicon oversaturated with implanted hydrogen Popov VP, Tyschenko IE, Safronov LN, Naumova OV, Antonova IV, Gutakovsky AK, Talochkin AB Thin Solid Films, 403-404, 500, 2002 |
| 5 |
Effect of annealing at argon pressure up to 1.2 GPa hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon Misiuk A, Bak-Misiuk J, Barez A, Romano-Rodriguez A, Antonova IV, Popov VP, Londos CA, Jun J International Journal of Hydrogen Energy, 26(5), 483, 2001 |
| 6 |
Thermal donor and oxygen precipitate formation in silicon during 450 degrees C treatments under atmospheric and enhanced pressure Antonova IV, Popov VP, Plotnikov AE, Misiuk A Journal of the Electrochemical Society, 146(4), 1575, 1999 |