검색결과 : 49건
| No. | Article |
|---|---|
| 1 |
Physical properties of Ga-Fe-N system relevant for crystallization of GaN - Initial studies Sadovyi B, Sadovyi P, Petrusha I, Dziecielewski I, Porowski S, Turkevich V, Nikolenko A, Tsykaniuk B, Strelchuk V, Grzegory I Journal of Crystal Growth, 507, 77, 2019 |
| 2 |
Melting of tetrahedrally bonded semiconductors: "anomaly" of the phase diagram of GaN? Porowski S, Sadovyi B, Karbovnyk I, Gierlotka S, Rzoska SJ, Petrusha I, Stratiichuk D, Turkevich V, Grzegory I Journal of Crystal Growth, 505, 5, 2019 |
| 3 |
Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure Sadovyi B, Nikolenko A, Weyher JL, Grzegory I, Dziecielewski I, Sarzynski M, Strelchuk V, Tsykaniuk B, Belyaev O, Petrusha I, Turkevich V, Kapustianyk V, Albrecht M, Porowski S Journal of Crystal Growth, 449, 35, 2016 |
| 4 |
Structural defects in bulk GaN Liliental-Weber Z, dos Reis R, Mancuso M, Song CY, Grzegory I, Porowski S, Bockowski M Journal of Crystal Growth, 403, 66, 2014 |
| 5 |
Nonequivalent atomic step edges-Role of gallium and nitrogen atoms in the growth of InGaN layers Turski H, Siekacz M, Wasilewski ZR, Sawicka M, Porowski S, Skierbiszewski C Journal of Crystal Growth, 367, 115, 2013 |
| 6 |
MBE fabrication of III-N-based laser diodes and its development to industrial system Skierbiszewski C, Siekacz M, Turski H, Muziol G, Sawicka M, Perlin P, Wasilewski ZR, Porowski S Journal of Crystal Growth, 378, 278, 2013 |
| 7 |
Multi feed seed (MFS) high pressure crystallization of 1-2 in GaN Bockowski M, Grzegory I, Lucznik B, Sochacki T, Nowak G, Sadovyi B, Strak P, Kamler G, Litwin-Staszewska E, Porowski S Journal of Crystal Growth, 350(1), 5, 2012 |
| 8 |
Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed-seed configuration Grzegory I, Bockowski M, Lucznik B, Weyher J, Litwin-Staszewska E, Konczewicz L, Sadovyi B, Nowakowski P, Porowski S Journal of Crystal Growth, 350(1), 50, 2012 |
| 9 |
Ca3N2 as a flux for crystallization of GaN Bockowski M, Grzegory I, Kchahapuridze A, Gierlotka S, Porowski S Journal of Crystal Growth, 312(18), 2574, 2010 |
| 10 |
The influence of indium on the growth of GaN from solution under high pressure Grzegory I, Bockowski M, Strak P, Krukowski S, Porowski S Journal of Crystal Growth, 312(18), 2593, 2010 |