검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
GaN grown on two-step cleaned C-terminated 6H-SiC by molecular-beam epitaxy Guan ZP, Cai AL, Porter H, Cabalu J, Chen J, Huang S, Giedd RE Journal of Vacuum Science & Technology A, 19(1), 280, 2001 |
| 2 |
Thermal removal of oxide and carbide from 6H-SiC surfaces before molecular beam epitaxial growth of GaN Guan ZP, Cai AL, Porter H, Cabalu J, Huang S, Giedd RE Applied Surface Science, 165(2-3), 203, 2000 |