| 1 |
Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates
Liu F, Huang L, Kamaladasa R, Picard YN, Preble EA, Paskova T, Evans KR, Davis RF, Porter LM
Journal of Crystal Growth, 387, 16, 2014 |
| 2 |
Planarization of Polymeric Field-Effect Transistors: Improvement of Nanomorphology and Enhancement of Electrical Performance
Singh KA, Young T, McCullough RD, Kowalewski T, Porter LM
Advanced Functional Materials, 20(14), 2216, 2010 |
| 3 |
Growth and structural investigations of epitaxial hexagonal YMnO3 thin films deposited on wurtzite GaN(001) substrates
Balasubramanian KR, Chang KC, Mohammad FA, Porter LM, Salvador PA, DiMaio J, Davis RF
Thin Solid Films, 515(4), 1807, 2006 |
| 4 |
Schottky barriers for Pt on 6H-and 4H-SiC (0001), (000(1)over-bar), (1(1)over-bar00) and (1(2)over-bar10) faces measured by I-V, C-V and internal photoemission
Shigiltchoff O, Kimoto T, Hobgood D, Neudeck PG, Porter LM, Devaty RP, Choyke WJ
Materials Science Forum, 389-3, 921, 2002 |
| 5 |
Schottky barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000(1)over-bar), (1(1)over-bar-00) and (1(2)over-bar-10) faces measured by I-V, C-V and internal photoemission
Shigiltchoff O, Bai S, Devaty RP, Choyke WJ, Kimoto T, Hobgood D, Neudeck PG, Porter LM
Materials Science Forum, 433-4, 705, 2002 |
| 6 |
Phosphorus-doped, silver-based pastes for self-doping ohmic contacts for crystalline silicon solar cells
Porter LM, Teicher A, Meier DL
Solar Energy Materials and Solar Cells, 73(2), 209, 2002 |
| 7 |
A comparison of single- and multi-layer ohmic contacts based on tantalum carbide on n-type and osmium on p-type silicon carbide at elevated temperatures
Jang T, Rutsch G, Odekirk B, Porter LM
Materials Science Forum, 338-3, 1001, 2000 |
