| 1 |
Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxidation annealing in 4H-SiC MOS capacitors
Yang C, Zhang FL, Yin ZP, Su Y, Qin FW, Wang DJ
Applied Surface Science, 488, 293, 2019 |
| 2 |
Effects of post oxidation annealing on electrical and interface properties of high pressure water vapor oxidized SiO2/SiC metal-oxide-semiconductor capacitors
Selvi KK, DasGupta N, Thirunavukkarasu K
Thin Solid Films, 531, 373, 2013 |
| 3 |
Electrical and optical properties of nanostructured VOx thin films prepared by direct current magnetron reactive sputtering and post-annealing in oxygen
Luo ZF, Wu ZM, Xu XD, Wang T, Jiang YD
Thin Solid Films, 519(19), 6203, 2011 |
| 4 |
Hydrogen redistribution in CVD SiO2 during post-oxidation annealing investigated by SIMS
Kawashima Y, Kawano H, Terashima K, Hamada K, Aoyagi S, Kudo M
Applied Surface Science, 231-2, 758, 2004 |
| 5 |
Photoemission spectroscopic studies on oxide/SiC interfaces formed by dry and pyrogenic oxidation
Hijikata Y, Yaguchi H, Ishida Y, Yoshikawa M, Kamiya T, Yoshida S
Materials Science Forum, 457-460, 1341, 2004 |
| 6 |
X-ray photoelectron spectroscopy studies of post-oxidation process effects on oxide/SiC interfaces
Hijikata Y, Yaguchi H, Yoshikawa M, Yoshida S
Materials Science Forum, 389-3, 1033, 2002 |
| 7 |
Significant improvement of inversion channel mobility in 4H-SiC MOSFET on (11(2)over-bar0) face using hydrogen post-oxidation annealing
Senzaki J, Fukuda K, Kojima K, Harada S, Kosugi R, Suzuki S, Suzuki T, Arai K
Materials Science Forum, 389-3, 1061, 2002 |
| 8 |
High inversion channel mobility of MOSFET fabricated on 4H-SiC C(000(1)over-bar) face using H-2 post-oxidation annealing
Fukuda K, Senzaki J, Kojima K, Suzuki T
Materials Science Forum, 433-4, 567, 2002 |
| 9 |
Analysis on electrical properties of ultrathin SiO2/Si(111) interfaces with an atomic force microscope
Hasunuma R, Ando A, Miki K, Nishioka Y
Applied Surface Science, 162, 547, 2000 |
| 10 |
Influence of post-oxidation annealing on electrical characteristics in 6H-SiC MOSFETs
Ohshima T, Yoshikawa M, Itoh H, Kojima K, Okada S, Nashiyama I
Materials Science Forum, 338-3, 1299, 2000 |
