검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Energy capability improvement of power DMOS transistors operating in pulsed conditions Costachescu D, Pfost M Solid-State Electronics, 103, 140, 2015 |
| 2 |
A numerical study of scaling issues for trench power MOSFETs Roig J, Cortes I, Jimenez D, Flores D, Iniguez B, Hidalgo S, Rebollo J Solid-State Electronics, 49(6), 965, 2005 |
| 3 |
A model of radiation effects in nitride-oxide films for power MOSFET applications Raparla VAK, Lee SC, Schrimpf RD, Fleetwood DM, Galloway KF Solid-State Electronics, 47(5), 775, 2003 |
| 4 |
Optimized P-well profile preventing punch-through for 4H-SiC power MOSFETs Shimoida Y, Kaneko S, Tanaka H, Hoshi M Materials Science Forum, 389-3, 1207, 2002 |
| 5 |
A process simplification scheme for fabricating self-aligned silicided trench-gate power MOSFETs Juang MH, Sun LC, Chen WT, Ou-Yang CI Solid-State Electronics, 45(1), 169, 2001 |
| 6 |
Rugged power MOSFETs in 6H-SiC with blocking capability up to 1800V Schorner R, Friedrichs P, Peters D, Mitlehner H, Weis B, Stephani D Materials Science Forum, 338-3, 1295, 2000 |
| 7 |
Investigation of lateral RESURF, 6H-SiC MOSFETs Agarwal AK, Saks NS, Mani SS, Hegde VS, Sanger PA Materials Science Forum, 338-3, 1307, 2000 |
| 8 |
An analytical model for the 3D-RESURF effect Ng R, Udrea F, Amaratunga G Solid-State Electronics, 44(10), 1753, 2000 |