검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric Bethge O, Henkel C, Abermann S, Pozzovivo G, Stoeger-Pollach M, Werner WSM, Smoliner J, Bertagnolli E Applied Surface Science, 258(8), 3444, 2012 |
| 2 |
Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium Abermann S, Henkel C, Bethge O, Pozzovivo G, Klang P, Bertagnolli E Applied Surface Science, 256(16), 5031, 2010 |
| 3 |
Reduction of the PtGe/Ge Electron Schottky-Barrier Height by Rapid Thermal Diffusion of Phosphorous Dopants Henkel C, Abermann S, Bethge O, Pozzovivo G, Puchner S, Hutter H, Bertagnolli E Journal of the Electrochemical Society, 157(8), H815, 2010 |
| 4 |
InAIN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases Cico K, Kuzmik J, Liday J, Husekova K, Pozzovivo G, Carlin JF, Grandjean N, Pogany D, Vogrincic P, Frohlich K Journal of Vacuum Science & Technology B, 27(1), 218, 2009 |