화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Duty ratio-controlled reflective property of silicon nitride films deposited at room temperature using a pulsed-PECVD at SiH4-NH3 plasma
Kim D, Lee S, Kim B, Kang BJ, Kim D
Current Applied Physics, 11(1), S43, 2011
2 Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4-N-2 plasma at room temperature
Lee H, Kim B, Kwon S
Current Applied Physics, 10(3), 971, 2010
3 Physico-chemical, structural and physical properties of hydrogenated silicon oxinitride films elaborated by pulsed radiofrequency discharge
Bedjaoui M, Despax B
Thin Solid Films, 518(15), 4142, 2010