화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Effect of (100) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs
Galiev GB, Vasilevskii IS, Klimov EA, Pushkarev SS, Klochkov AN, Maltsev PP, Presniakov MY, Trunkin IN, Vasiliev AL
Journal of Crystal Growth, 392, 11, 2014
2 Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer
Galiev GB, Vasil'evskii IS, Pushkarev SS, Klimov EA, Imamov RM, Buffat PA, Dwir B, Suvorova EI
Journal of Crystal Growth, 366, 55, 2013