| 1 |
Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxidation annealing in 4H-SiC MOS capacitors
Yang C, Zhang FL, Yin ZP, Su Y, Qin FW, Wang DJ
Applied Surface Science, 488, 293, 2019 |
| 2 |
Structural, morphological, photoluminescence and photocatalytic properties of Gd-doped ZnO films
Yi XY, Ma CY, Yuan F, Wang N, Qin FW, Hu BC, Zhang QY
Thin Solid Films, 636, 339, 2017 |
| 3 |
Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing
Liu BB, Qin FW, Wang DJ
Applied Surface Science, 364, 769, 2016 |
| 4 |
Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure
Li XX, Bian JM, Wang MH, Miao LH, Liu HZ, Qin FW, Zhang YZ, Luo YM
Materials Research Bulletin, 77, 199, 2016 |
| 5 |
Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing
Liu BB, Qin FW, Wang DJ
Applied Surface Science, 355, 59, 2015 |
| 6 |
Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD
Liu YM, Qin FW, Zhang D, Bian JM, Zhao Y, Wang EP, Wang S, Zhong MM, Ju ZH
Journal of Crystal Growth, 368, 92, 2013 |
| 7 |
Influence of Ar/H-2 ratio on the characteristics of phosphorus-doped hydrogenated nanocrystalline silicon films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition
Zhang XY, Wu AM, Shi SF, Qin FW, Bian JM
Thin Solid Films, 521, 181, 2012 |
| 8 |
Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma
Huang LQ, Zhu QZ, Gao MC, Qin FW, Wang DJ
Applied Surface Science, 257(23), 10172, 2011 |
| 9 |
Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices
Zhang D, Bian JM, Qin FW, Wang J, Pan L, Zhao JM, Zhao Y, Bai YZ, Du GT
Materials Research Bulletin, 46(10), 1582, 2011 |
| 10 |
Electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition system with monitoring in situ for epitaxial growth of group-III nitrides
Xu Y, Gu B, Qin FW
Journal of Vacuum Science & Technology A, 22(2), 302, 2004 |
