화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 28 nm FDSOI analog and RF Figures of Merit at N-2 cryogenic temperatures
Esfeh BK, Planes N, Haond M, Raskin JP, Flandre D, Kilchytska V
Solid-State Electronics, 159, 77, 2019
2 Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements
Esfeh BK, Kilchytska V, Barral V, Planes N, Haond M, Flandre D, Raskin JP
Solid-State Electronics, 117, 130, 2016
3 Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit
Arshad MKM, Kilchytska V, Emam M, Andrieu F, Flandre D, Raskin JP
Solid-State Electronics, 97, 38, 2014