검색결과 : 3건
No. | Article |
---|---|
1 |
28 nm FDSOI analog and RF Figures of Merit at N-2 cryogenic temperatures Esfeh BK, Planes N, Haond M, Raskin JP, Flandre D, Kilchytska V Solid-State Electronics, 159, 77, 2019 |
2 |
Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements Esfeh BK, Kilchytska V, Barral V, Planes N, Haond M, Flandre D, Raskin JP Solid-State Electronics, 117, 130, 2016 |
3 |
Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit Arshad MKM, Kilchytska V, Emam M, Andrieu F, Flandre D, Raskin JP Solid-State Electronics, 97, 38, 2014 |