화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Lateral solid phase epitaxy of amorphously grown Si1-xGex layers on SiO2/Si(100) substrates using in-situ RPCVD postannealing
Skibitzki O, Yamamoto Y, Schubert MA, Tillack B
Thin Solid Films, 593, 91, 2015
2 High strain embedded-SiGe via low temperature reduced pressure chemical vapor deposition
He H, Brabant P, Chung K, Shinriki M, Adam T, Reznicek A, Sadana D, Hasaka S, Francis T
Thin Solid Films, 520(8), 3175, 2012
3 Gas phase particle formation and elimination on Si (100) in low temperature reduced pressure chemical vapor deposition silicon-based epitaxial layers
Shinriki M, Chung K, Hasaka S, Brabant P, He H, Adam TN, Sadana D
Thin Solid Films, 520(8), 3190, 2012
4 Solid-phase epitaxy of amorphous silicon films by in situ postannealing using RPCVD
Skibitzki O, Yamamoto Y, Schubert MA, Weidner G, Tillack B
Solid-State Electronics, 60(1), 13, 2011