화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Magnetic, optical and electrical characterization of SiC doped with scandium during the PVT growth
Racka K, Avdonin A, Sochacki M, Tymicki E, Grasza K, Jakiela R, Surma B, Dobrowolski W
Journal of Crystal Growth, 413, 86, 2015
2 Chlorine-enhanced thermal oxides growth and significant trap density reduction at SiO2/SiC interface by incorporation of phosphorus
Krol K, Sochacki M, Strupinski W, Racka K, Guziewicz M, Konarski P, Misnik M, Szmidt J
Thin Solid Films, 591, 86, 2015
3 Growth of SiC by PVT method with different sources for doping by a cerium impurity, CeO2 or CeSi2
Racka K, Tymicki E, Grasza K, Jakiela R, Pisarek M, Surma B, Avdonin A, Skupinski P, Krupka J
Journal of Crystal Growth, 401, 677, 2014
4 Growth of SiC by PVT method in the presence of cerium dopant
Racka K, Tymicki E, Grasza K, Kowalik IA, Arvanitis D, Pisarek M, Kosciewicz K, Jakiela R, Surma B, Diduszko R, Teklinska D, Mierczyk J, Krupka J
Journal of Crystal Growth, 377, 88, 2013