화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Optimization of InxGa1-xAs/ln(y)AI(1-y)As high electron mobility transistor structures grown by solid-source molecular beam epitaxy
Zheng HQ, Radahakrishnan K, Yoon SF, Ng GI
Journal of Vacuum Science & Technology B, 19(2), 490, 2001
2 Band gap narrowing effect in Be-doped AlxGa1-xAs studied by photoluminescence spectroscopy
Zheng HQ, Wang H, Zhang PH, Zeng Z, Radahakrishnan K, Yoon SF, Ng GI
Solid-State Electronics, 44(1), 37, 2000