검색결과 : 11건
No. | Article |
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1 |
Determination of composition of non-homogeneous GaInNAs layers Pucicki D, Bielak K, Sciana B, Radziewicz D, Latkowska-Baranowska M, Kovac J, Vincze A, Tlaczala M Journal of Crystal Growth, 433, 105, 2016 |
2 |
Defect distribution in InGaAsN/GaAs multilayer solar cells Kosa A, Stuchlikova L, Harmatha L, Mikolasek M, Kovac J, Sciana B, Dawidowski W, Radziewicz D, Tlaczala M Solar Energy, 132, 587, 2016 |
3 |
The influence of top electrode of InGaAsN/GaAs solar cell on their electrical parameters extracted from illuminated I-V characteristics Dawidowski W, Sciana B, Zborowska-Lindert I, Mikolasek M, Bielak K, Badura M, Pucicki D, Radziewicz D, Kovac J, Tlaczala M Solid-State Electronics, 120, 13, 2016 |
4 |
Electrical characterization of the A(III)B(V)-N heterostructures by capacitance methods Stuchlikova L, Harmatha L, Petrus M, Rybar J, Sebok J, Sciana B, Radziewicz D, Pucicki D, Tlaczala M, Kosa A, Benko P, Kovac J, Juhasz P Applied Surface Science, 269, 175, 2013 |
5 |
Study of photoexcited plasma in p-doped GaAs beveled structures by micro-Raman spectroscopy Srnanek R, Irmer G, Donoval D, Novotny I, Sciana B, Radziewicz D, Tlaczala M Applied Surface Science, 254(15), 4845, 2008 |
6 |
AlGaAs/GaAs heterojunction phototransistor with a double delta-doped base grown by AP MOVPE Sciana B, Zborowska-Lindert I, Radziewicz D, Boratynski B, Tlaczala M, Kovac J, Srnanek R, Skriniarova J, Florovic M Journal of Crystal Growth, 310(23), 5227, 2008 |
7 |
Determination of the doping concentration profile in Si delta-doped GaAs layers using micro-Raman spectroscopy of bevelled structures Srnanek R, Geurts J, Lentze M, Irmer G, Kovac J, Donoval D, Mc Phail DS, Kordos P, Florovic M, Vincze A, Sciana B, Radziewicz D, Tlaczala M Thin Solid Films, 497(1-2), 7, 2006 |
8 |
Micro-Raman study of photoexcited plasma in GaAs bevelled structures Srnanek R, Irmer G, Geurts J, Lentze M, Donoval D, Sciana B, Radziewicz D, Tlaczala M, Florovic A, Novotny I Applied Surface Science, 243(1-4), 96, 2005 |
9 |
Study of delta-doped GaAs layers by micro-Raman spectroscopy on bevelled samples Srnanek R, Geurts J, Lentze M, Irmer G, Donoval D, Brdecka P, Kordos P, Forster A, Sciana B, Radziewicz D, Tlaczala M Applied Surface Science, 230(1-4), 379, 2004 |
10 |
MOVPE technology and characterisation of silicon delta-doped GaAs and AlxGa1-xAs Sciana B, Radziewicz D, Paszkiewicz B, Tlaczala M, Utko M, Sitarek P, Sek G, Misiewicz J, Kinder R, Kovac J, Srnanek R Thin Solid Films, 412(1-2), 55, 2002 |