검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application Wang XL, Chen TS, Xiao HL, Tang J, Ran JX, Zhang ML, Feng C, Hou QF, Wei M, Jiang LJ, Li JM, Wang ZG Solid-State Electronics, 53(3), 332, 2009 |
| 2 |
Growth temperature dependences of InN films grown by MOCVD Yang CB, Wang XL, Xiao HL, Zhang XB, Hua GX, Ran JX, Wang CM, Li JP, Li JM, Wang ZG Applied Surface Science, 255(5), 3149, 2008 |
| 3 |
Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD Ran JX, Wang XL, Hu GX, Li JP, Wang BZ, Xiao HL, Wang JX, Zeng YP, Li JM, Wang ZG Journal of Crystal Growth, 298, 235, 2007 |
| 4 |
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate Wang XL, Wang CM, Hu GX, Mao HL, Fang CB, Wang JX, Ran JX, Li HP, Li JM, Wang ZG Journal of Crystal Growth, 298, 791, 2007 |
| 5 |
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD Wang XL, Hu GX, Ma ZY, Ran JX, Wang CM, Mao HL, Tang H, Li HP, Wang JX, Zeng YP, Jinmin LM, Wang ZG Journal of Crystal Growth, 298, 835, 2007 |
| 6 |
1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz Wang XL, Cheng TS, Ma ZY, Hu G, Xiao HL, Ran JX, Wang CM, Luo WJ Solid-State Electronics, 51(3), 428, 2007 |