검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Deep GaN etching by inductively coupled plasma and induced surface defects Ladroue J, Meritan A, Boufnichel M, Lefaucheux P, Ranson P, Dussart R Journal of Vacuum Science & Technology A, 28(5), 1226, 2010 |
| 2 |
Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition Marcos G, Rhallabi A, Ranson P Applied Surface Science, 254(11), 3576, 2008 |
| 3 |
Two cryogenic processes involving SF6, O-2, and SiF4 for silicon deep etching Tillocher T, Dussart R, Overzet LJ, Mellhaoui X, Lefaucheux P, Boufnichel M, Ranson P Journal of the Electrochemical Society, 155(3), D187, 2008 |
| 4 |
Oxidation threshold in silicon etching at cryogenic temperatures Tillocher T, Dussart R, Mellhaoui X, Lefaucheux P, Maaza NM, Ranson P, Boufnichel M, Overzet LJ Journal of Vacuum Science & Technology A, 24(4), 1073, 2006 |
| 5 |
Topographic and kinetic effects of the SF6/O-2 rate during a cryogenic etching process of silicon Marcos G, Rhallabi A, Ranson P Journal of Vacuum Science & Technology B, 22(4), 1912, 2004 |
| 6 |
Monte Carlo simulation method for etching of deep trenches in Si by a SF6/O-2 plasma mixture Marcos G, Rhallabi A, Ranson P Journal of Vacuum Science & Technology A, 21(1), 87, 2003 |
| 7 |
Profile control of high aspect ratio trenches of silicon. II. Study of the mechanisms responsible for local bowing formation and elimination of this effect Boufnichel M, Aachboun S, Lefaucheux P, Ranson P Journal of Vacuum Science & Technology B, 21(1), 267, 2003 |
| 8 |
Low-temperature Raman spectra of nitromethane single crystals. Lattice dynamics and Davydov splittings Ouillon R, Pinan-Lucarre JP, Ranson P, Baranovic G Journal of Chemical Physics, 116(11), 4611, 2002 |
| 9 |
Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing Boufnichel M, Aachboun S, Grangeon F, Lefaucheux P, Ranson P Journal of Vacuum Science & Technology B, 20(4), 1508, 2002 |
| 10 |
Study of a mechanically clamped cryo-chuck device in a high density plasma for deep anisotropic etching of silicon Hibert C, Aachboun S, Boufnichel M, Ranson P Journal of Vacuum Science & Technology A, 19(2), 646, 2001 |